ma y . 20 1 7 . ver. 1.1 magnachip semiconductor ltd . 1 m du10n180rh C single n - channel trench mosfet 100 v absolute maximum ratings (t j = 25 o c) characteristics symbol rating unit drain - source voltage v dss 100 v gate - source voltage v gss 20 v continuous drain current (1) t c =25 o c (silicon limited) i d 48.1 a t c = 25 o c (package limited) 40 t c =100 o c (silicon limited) 30.4 t a =25 o c 12.4 pulsed drain current ( 3 ) i dm 160 power dissipation t c =25 o c p d 83.3 w t c = 100 o c 33.3 t a =25 o c 5.5 single pulse avalanche energy ( 2 ) e as 50 mj junction and storage temperature range t j , t stg - 55~ 150 o c thermal characteristics characteristics symbol rating unit thermal resistance, junction - to - ambient (1) r ja 22.7 o c/w thermal resistance, junction - to - case r jc 1.5 md u10n180 sing le n - channel trench mosfet 100 v , 40a, 18m features ? v ds = 100 v ? i d = 40 a @v gs = 10v ? very low on - resistance r ds(on) < 18.0 m @v gs = 10v < 23.0 m @v gs = 4.5 v ? 100% uil tested ? 100% rg tested general description the md u 10n1 8 0 uses advanced magnachip s mosfet technology, which provides high performance in on - state resistance, fast switching performance and excellent quality . md u 10n 180 is suitable device for synchronous rectification for server and general purpose applications. p dfn 56 s s s g g s s s d d d d d d d d d s g
ma y . 20 1 7 . ver. 1.1 magnachip semiconductor ltd . 2 m du10n180rh C single n - channel trench mosfet 100 v ordering information part number temp. range package packing ro hs status md u 10n1 8 0 rh - 55~1 50 o c p dfn 56 tape & reel halogen free electrical characteristics (t j =25 o c) characteristics symbol test condition min typ . max unit static characteristics drain - source breakdown voltage bv dss i d = 250a, v gs = 0v 100 - - v gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 1. 0 1.5 2 . 0 drain cut - off current i dss v ds = 100 v, v gs = 0v - - 1 .0 ua gate leakage current i gss v gs = 20v, v ds = 0v - - 100 na drain - source on resistance r ds(on) v gs = 10v, i d = 20 a - 15 18 m v gs = 4.5 v, i d = 20 a - 18 23 forward transconductance g fs v ds = 10 v, i d = 20 a - 45 - s dynamic characteristics total gate charge q g( 10 v) v dd = 50 v, i d = 20 a, v gs = 10v - 30.8 - nc gate - source charge q gs - 6.0 - gate - drain charge q gd - 5.1 - input capacitance c iss v ds = 40 v, v gs = 0v, f = 1.0mhz - 1,995 - pf reverse transfer capacitance c rss - 18 - output capacitance c oss - 253 - turn - on delay time t d(on) v gs = 1 0 v, v d d = 50 v, i d = 20a, r g = 3 , - 8.0 - ns rise time t r - 10.5 - turn - off delay time t d(off) - 26.3 - fall time t f - 7.4 - gate resistance r g f=1 .0 mhz - 1.0 - drain - source body diode characteristics source - drain diode forward voltage v sd i s = 20 a, v gs = 0v - 0. 8 1. 2 v body diode reverse recovery time t rr i f = 20 a, dl/dt = 100 a/s - 54 - ns body diode reverse recovery charge q rr - 120 - nc note : 1. surface mounted fr - 4 board by jedec (jesd51 - 7). continuous current at t c =25 is silicon limited 2. e as is tested at starting tj = 25 , l = 1.0 mh, i as = 10 a, v gs = 10v . 3. pulse width limited by tjmax
ma y . 20 1 7 . ver. 1.1 magnachip semiconductor ltd . 3 m du10n180rh C single n - channel trench mosfet 100 v fig.5 transfer characteristics fig.1 on - region characteristics fig.2 on - resi stance variation with drain current and gate voltage fig.3 on - resistance variation with temperature fig.4 on - resistance variation with gate to source voltage fig.6 body diode forward voltage variation with source current and temperature 0 5 10 15 20 25 30 35 40 45 50 12 14 16 18 20 22 24 v gs = 10v v gs = 4.5v drain-source on-resistance [m ? ] i d , drain current [a] 0 1 2 3 4 5 0 20 40 60 80 v gs , gate-source voltage [v] notes : v ds = 10v i d , drain current [a] 0 1 2 3 4 5 0 20 40 60 80 100 3.5v 8.0v 4.0v 5.0v 3.0v 6.0v v gs = 10.0v i d , drain current [a] v ds , drain-source voltage [v] 2 3 4 5 6 7 8 9 10 10 20 30 40 50 notes : i d = 20.0a r ds(on) [m ? ], drain-source on-resistance v gs , gate to source volatge [v] 0.2 0.4 0.6 0.8 1.0 1.2 0.1 1 10 notes : v gs = 0v i dr , reverse drain current [a] v sd , source-drain voltage [v] -50 -25 0 25 50 75 100 125 150 0.0 0.4 0.8 1.2 1.6 2.0 2.4 notes : 1. v gs = 10 v 2. i d = 20 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c]
ma y . 20 1 7 . ver. 1.1 magnachip semiconductor ltd . 4 m du10n180rh C single n - channel trench mosfet 100 v fig.7 gate charge characteristics fig.8 capacitance characteristics fig.9 maximum safe operating area fig.10 maximum drain current v s. case temperature fig.11 transient thermal response curve 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 10 -3 10 -2 10 -1 10 0 ? ? n o t e s : duty factor, d=t 1 /t 2 peak t j = p dm * z jc * r jc (t) + t c single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), thermal response t 1 , rectangular pulse duration [sec] 0 5 10 15 20 25 30 35 0 2 4 6 8 10 v ds = 50v note : i d = 20a v gs , gate-source voltage [v] q g , total gate charge [nc] 0 5 10 15 20 25 30 35 40 0 1000 2000 3000 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd notes ; 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitance [pf] v ds , drain-source voltage [v] 25 50 75 100 125 150 0 10 20 30 40 50 limited by package i d , drain current [a] t c , case temperature [ ] 10 -1 10 0 10 1 10 2 10 -1 10 0 10 1 10 2 10 3 10 s 1 ms 10 ms 1 s dc 100 ms operation in this area is limited by r ds(on) single pulse t j =max rated t c = 2 5 ? ? i d , drain current [a] v ds , drain-source voltage [v]
ma y . 20 1 7 . ver. 1.1 magnachip semiconductor ltd . 5 m du10n180rh C single n - channel trench mosfet 100 v package dimension pdfn56 (5x6mm 2 ) d imensions are in millimeters, unless otherwise specified dimension millimeters min max a 0.90 1.10 b 0.33 0.51 c 0.20 0.34 d1 4.50 5.10 d2 - 4.22 e 5.90 6.30 e1 5.50 6.10 e2 - 4.30 e 1.27bsc h 0.41 0.71 k 0.20 - l 0.51 0.71 0 12
ma y . 20 1 7 . ver. 1.1 magnachip semiconductor ltd . 6 m du10n180rh C single n - channel trench mosfet 100 v disclaimer: the products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any product can reasonably be expected to result in a personal injury. sellers custome rs using or selling sellers products for use in such applications do so at their own risk and agree to fully defend and indemnify seller. magnachip reserves the right to change the specifications and circuitry without notice at any time. magnachip doe s not consider responsibility for use of any circuitry other than circuitry entirely included in a magnachip product. is a registered trademark of magnachip semiconductor ltd.
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